Micron Technology DRAM SDRAMMobile-, Part #: MT41K64M16TW-107 IT:J | Dynamic random access memory | DEX
Micron Technology DRAM SDRAMMobile-, Part #: MT41K64M16TW-107 IT:J | Dynamic random access memory | DEX
-70% Off$1.90
Description
Micron Technology DRAM SDRAM-DDR3L, Part #: MT41K64M16TW-107 IT:J features: • VDD = VDDQ = +1.35V (1.283V to 1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration
MIL:MT41K64M16TW-107 IT J
MT41K64M16TW-107 IT:J
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